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KVR26N19S8L/8 - Kingston Technology ValueRAM KVR26N19S8L/8 module de mémoire 8 Go 1 x 8 Go DDR4 2666 MHz
Ref : KVR26N19S8L/828,67 €
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LIVRAISON LUXEMBOURG : 1-2 JOURS OUVRABLES !
Kingston ValueRAM - DDR4 - module - 8 Go - DIMM 288 broches Profil très bas - 2666 MHz / PC4-21300 - CL19 - 1.2 V - mémoire sans tampon - non ECC
Points Clés
- 16 internal banks- 4 groups of 4 banks each
- Data bus inversion (DBI) for data bus
- Fly-by topology
- Low-power auto self refresh (LPASR)
- On-board I2 serial presence-detect (SPD) EEPROM
- On-die VREFDQ generation and calibration
- RoHS Compliant and Halogen-Free
- Selectable BC4 or BL8 on-the-fly (OTF)
- Single-rank
- Terminated control command and address bus
Points Clés
- 16 internal banks- 4 groups of 4 banks each
- Data bus inversion (DBI) for data bus
- Fly-by topology
- Low-power auto self refresh (LPASR)
- On-board I2 serial presence-detect (SPD) EEPROM
- On-die VREFDQ generation and calibration
- RoHS Compliant and Halogen-Free
- Selectable BC4 or BL8 on-the-fly (OTF)
- Single-rank
- Terminated control command and address bus
- Data bus inversion (DBI) for data bus
- Fly-by topology
- Low-power auto self refresh (LPASR)
- On-board I2 serial presence-detect (SPD) EEPROM
- On-die VREFDQ generation and calibration
- RoHS Compliant and Halogen-Free
- Selectable BC4 or BL8 on-the-fly (OTF)
- Single-rank
- Terminated control command and address bus
Kingston Technology ValueRAM KVR26N19S8L/8 module de mémoire 8 Go 1 x 8 Go DDR4 2666 MHz
KVR26N19S8L/8Kingston Technology ValueRAM KVR26N19S8L/8. composant pour: PC/serveur, Mémoire interne: 8 Go, Disposition de la mémoire (modules x dimensions): 1 x 8 Go, Type de mémoire interne: DDR4, Fréquence de la mémoire: 2666 MHz, Support de mémoire: 288-pin DIMM, Latence CAS: 19
| Caractéristiques | |
| composant pour | PC/serveur |
| Disposition de la mémoire (modules x dimensions) | 1 x 8 Go |
| ECC | Non |
| Fréquence de la mémoire | 2666 MHz |
| Latence CAS | 19 |
| Mémoire de tension | 1.2 V |
| Mémoire interne | 8 Go |
| Niveau de mémoire | 1 |
| Norme JEDEC | Oui |
| Placage en plomb | Or |
| Rayon de temps actif | 32 ns |
| Refresh row cycle time (TRFC) | 350 ns |
| Support de mémoire | 288-pin DIMM |
| Temps du cycle de la ligne (TRC) | 45,75 ns |
| Tension de programmation (VPP) | 2,5 V |
| Type de mémoire interne | DDR4 |
| Type de mémoire mise en cache | Unregistered (unbuffered) |
| Conditions environnementales | |
| Température d'opération | 0 - 85 °C |
| Température hors fonctionnement | -55 - 100 °C |
| Détails techniques | |
| Certificats de durabilité | RoHS |